Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films
| Autor: | Jungwan Choi, Seungho Park, Woori Do, Jin-Ha Hwang, Seung-Muk Bae, Byung-Kuk Kim, Hyoung-June Kim, Won-Beom Jin |
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| Rok vydání: | 2014 |
| Předmět: |
Flash-lamp
Materials science genetic structures Silicon business.industry Annealing (metallurgy) Mechanical Engineering chemistry.chemical_element Condensed Matter Physics eye diseases law.invention Ion implantation chemistry Mechanics of Materials law Optoelectronics General Materials Science sense organs Irradiation Arc lamp Thin film business Visible spectrum |
| Zdroj: | Materials Research Bulletin. 58:164-168 |
| ISSN: | 0025-5408 |
| DOI: | 10.1016/j.materresbull.2014.04.047 |
| Popis: | Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films. |
| Databáze: | OpenAIRE |
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