The sputter behaviour of vanadium silicide studied by a computer simulation technique

Autor:	V.N. Samoylov, A. Zehe, B. Fritzsch
Rok vydání:	1986
Předmět:	Yield (engineering) Chemistry Krypton chemistry.chemical_element Mineralogy General Chemistry Condensed Matter Physics Molecular physics Amorphous solid Neon chemistry.chemical_compound Sputtering Angle of incidence (optics) Atom Silicide Materials Chemistry
Zdroj:	Solid State Communications. 60:553-555
ISSN:	0038-1098
DOI:	10.1016/0038-1098(86)90269-3
Popis:	A detailed study of the sputter yield of VSi2 has been carried out by a computer simulation technique. Krypton and neon ions in the energy range of 200–5000 eV are used, and the angle of incidence on the (0001) surface of VSi2 is taken to be 90°. The dynamical atom block considered in the computer program consists of 397 atoms situated at 5 equally spaced layers. Both amorphous and crystalline targets are discussed, having expectingly a different outcome for yield, as well as for preferential and directional sputtering. Theoretical results are in good accord with experimental findings.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d1a33627e494bbd38c1695a0920cfb6 https://doi.org/10.1016/0038-1098(86)90269-3 Zobrazit plný text záznamu