Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
| Autor: | N. A. Baidakova, D. O. Filatov, A. V. Zdoroveishev, D. S. Prokhorov, M. V. Dorokhin, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, M. V. Ved, A. V. Zaitsev |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science Phosphorus Electron concentration Doping Analytical chemistry chemistry.chemical_element 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials chemistry 0103 physical sciences Rapid thermal annealing 0210 nano-technology |
| Zdroj: | Semiconductors. 53:1262-1265 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782619090161 |
| Popis: | The photoluminescence spectra of epitaxial n+-Ge:P/Si(001) structures are studied. The structures are grown by hot-wire chemical vapor deposition and doped with phosphorus to the maximum electron concentration 1 × 1020 cm–3 from a source based on thermally decomposed GaP. The effects of the doping level and rapid thermal annealing of n+-Ge:P layers on the photoluminescence spectra are studied. It is demonstrated that the epitaxial n+-Ge:P/Si(001) layers grown by hot-wire chemical vapor deposition are promising for application as active regions of light-emitting optoelectronic devices operating in the near-infrared spectral region. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
| Nepřihlášeným uživatelům se plný text nezobrazuje | K zobrazení výsledku je třeba se přihlásit. |