Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology

Autor:	J. Kanyandekwe, D. Barge, P. Morin, L. Grenouillet, M. Labrot, S. Maitrejean, E. Augendre, V. Lapras, Y. Morand, D. Dutartre, M. Gros-Jean, O. Gourhant, C. Gaumer, N. Rambal, D. Cooper, L. Clement
Rok vydání:	2018
Předmět:	Planar Materials science CMOS business.industry Optoelectronics Epitaxy business PMOS logic
Zdroj:	Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d11f975f51d0660963a7b263064dacb https://doi.org/10.7567/ssdm.2018.c-3-03 Zobrazit plný text záznamu