Ring Oscillator Performance and Parasitic Extraction Simulation in Finfet Technology

Autor:	K. von Armin, Christian Pacha, M. Kulkarni, T. Schulz, P. Patruno, Weize Xiong, Andrew Marshall, C. Rinn Cleavelin, Klaus Schruefer
Rok vydání:	2006
Předmět:	Integrated circuit development Materials science Silicon Spice chemistry.chemical_element Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Ring oscillator Ring (chemistry) chemistry MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Parasitic extraction
Zdroj:	2006 IEEE Dallas/CAS Workshop on Design, Applications, Integration and Software.
DOI:	10.1109/dcas.2006.321049
Popis:	Correlation of a full parasitic extracted simulation using StarRC and Spice to silicon is demonstrated for Fully Depleted (FD) FinFET silicon-on-insulator ring oscillators. The results indicate similar accuracy can be expected as obtained from bulk simulations. This is important in integrated circuit development, as the accurate simulation of circuit performance is imperative to IC development.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ce315a41878f5a46b9a75c8e0652105 https://doi.org/10.1109/dcas.2006.321049 Zobrazit plný text záznamu