| Autor: |
Hee Tae Lee, Jung Gon Kim, Hee Won Shin, Jang Yul Kim, Mi Seon Park, Myoung Chul Chun, Yeon Suk Jang, Hee Jun Lee, Si Hyun Lee, Tai Hee Eun, Won-Jae Lee, Im Gyu Yeo |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :43-46 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.821-823.43 |
| Popis: |
The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method has been investigated. The porous graphite plate was inserted on source powder to produce a more C-rich for the polytype stability of 4H-SiC crystal and a uniform radial temperature gradient. The dendrite structure obtained from SiC source powder in the crucible with porous graphite plate was more densely formed than that in the conventional crucible. The crystal quality of 4H-SiC single crystals grown in porous graphite inserted crucible was revealed to be better than that of crystal grown SiC crystals in the conventional crucible. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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