Evidence for capture of holes into resonant states in boron-doped silicon

Autor:	Koung-An Chao, Shun-Tung Yen, V. N. Tulupenko, Chien-Ping Lee, A. Dalakyan, Pei Kang Chung, E. S. Cheng
Rok vydání:	2004
Předmět:	education.field_of_study Silicon Chemistry Doping Population General Physics and Astronomy chemistry.chemical_element Spectral line Excited state Atomic physics education Spectroscopy Electronic band structure Ground state
Zdroj:	Journal of Applied Physics. 96:4970-4975
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1795985
Popis:	The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics. (Less)
Databáze:	OpenAIRE
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