Spectroscopic, topological, and electronic characterization of ultrathin a-CdTe:O tunnel barriers

Autor:	Anthony Mozynski, Dan Malz, Ivan Dolog, Robert Mallik
Rok vydání:	2004
Předmět:	Materials science Argon General Physics and Astronomy chemistry.chemical_element Topology Cadmium telluride photovoltaics Amorphous solid Condensed Matter::Materials Science chemistry Sputtering Condensed Matter::Superconductivity Thin film Deposition (law) Quantum tunnelling Surface states
Zdroj:	Journal of Applied Physics. 95:3075-3080
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1647259
Popis:	Ultrathin oxygenated amorphous CdTe (a-CdTe:O) films are prepared by rf sputtering of CdTe in a background of argon or argon/nitrogen/oxygen mixtures. Atomic force microscopy (AFM) is used to characterize the films and shows that they have an island structure typical of most sputtered thin films. However, when sufficiently low powers and deposition rates are employed during sputtering, the resulting films are remarkably smooth and sufficiently thin for use as barrier layers in inelastic electron tunneling (IET) junctions. Four terminal current–voltage data are recorded for Al/a-CdTe:O/Pb tunnel junctions and conductance–voltage curves are derived numerically. WKB fits to the conductance–voltage curves are obtained using a two-component trapezoidal plus square (TRAPSQR) model barrier potential to determine values for the tunnel barrier parameters (height, shape, and width); these parameters are consistent with AFM topological measurements and values from similar devices reported in the literature. IET spec...
Databáze:	OpenAIRE
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