N-Type Polycrystalline Silicon Thin Films and Solar Cells Deposited by CVD
| Autor: | Benvenuto, A., Buitrago, R.H., Ventosinos, F., Schmidt, J.A. |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| DOI: | 10.4229/28theupvsec2013-3dv.1.4 |
| Popis: | 28th European Photovoltaic Solar Energy Conference and Exhibition; 2613-2616 We deposit n+ polycrystalline silicon (pc-Si) thin films on glass substrates by atmospheric pressure CVD, using trichlorosilane as a Si source and PCl3 as a phosphorous source. The structural and electrical characterization of the films, involving measurements of X-rays diffraction, reflectance in the UV region, SEM microscopy, electrical conductivity as a function of temperature and Hall effect, reveal a material suitable to act as emitter in a solar cell. To prove the concept we deposit c-Si (p) / pc-Si (n+) junctions, and we characterize them by measurements of the I-V curve and the quantum efficiency. Despite a high series resistance, which degrades the fill factor, the cells show high values of open circuit voltage (~500 mV) and short circuit current (~25 mA/cm2), and a wide spectral response. The results are encouraging for the deposition of low-cost polycrystalline thin film silicon solar cells on glass by CVD. |
| Databáze: | OpenAIRE |
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