Understanding the Growth Mechanisms of Multilayered Systems in Atomic Layer Deposition Process
| Autor: | Christoph Wiegand, Robert Zierold, Kornelius Nielsch, René Faust, Alexander Meinhardt, Robert H. Blick |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Dopant General Chemical Engineering Nucleation Context (language use) 02 engineering and technology General Chemistry Quartz crystal microbalance 021001 nanoscience & nanotechnology 01 natural sciences Atomic layer deposition Chemical engineering 0103 physical sciences Materials Chemistry Deposition (phase transition) Growth rate 0210 nano-technology Layer (electronics) |
| Zdroj: | Chemistry of Materials. 30:1971-1979 |
| ISSN: | 1520-5002 0897-4756 |
| Popis: | In atomic layer deposition (ALD), the initial growth is of particular interest because it defines the nucleation behavior and determines the minimum number of cycles to achieve a closed layer. The growth rate is quantified by the growth per cycle (GPC). Due to nucleation inhibition or enhancement, the initial GPC for ALD processes of a given material system onto a specific substrate may differ from its (steady-state) literature value because the GPC is mostly noted as an average value of at least a few hundred cycles. However, the knowledge of the growth behavior within the first few cycles is of particular importance in context of super cycles and nanolaminates. Individual ALD cycles of the host material (e.g., TiO2) are replaced by those for the deposition of another compound (e.g., Al2O3) to infiltrate the host material with a dopant. For a precise dosage/doping and tailor-made synthesis, knowledge of the individual GPC is crucial. Herein, precise quartz crystal microbalance (QCM) studies were used to ... |
| Databáze: | OpenAIRE |
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