| Popis: |
The current density versus time (J–t) characteristics of yttria-stabilized-zirconia (YSZ) films on Si(001) below 150 °C were measured. By the application of a negative voltage up to 20 V to the aluminum top electrode, a current peak was observed. The peak evolution was considered on the basis of the space-charge-limited current transient of oxygen vacancy (model-1), and the modulation of electronic conductivity upon oxygen vacancy redistribution (model-2). From the point of view of the activation energy and the relative dielectric constant estimation, model-2 gave a more plausible value. It was also observed, based on J–t measurements, that Nb-doping causes the suppression of oxygen vacancies. |
