Plasma Etching in InAlN/GaN Hemt Technology
| Autor: | P. A. Brudnyi, I. A. Filippov, L. E. Velikovskii, Vadim A. Shakhnov, O. I. Demchenko |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Plasma etching Materials science Fabrication 010308 nuclear & particles physics business.industry Transistor General Physics and Astronomy Heterojunction High-electron-mobility transistor 01 natural sciences law.invention law 0103 physical sciences Optoelectronics Reactive-ion etching business High electron |
| Zdroj: | Russian Physics Journal. 63:94-98 |
| ISSN: | 1573-9228 1064-8887 |
| DOI: | 10.1007/s11182-020-02006-6 |
| Popis: | The experimental data on the plasma etching of Si3N4 for sub-100 nm gate fabrication for high electron mobility transistors (HEMTs) based on InAlN/GaN heterostructures are analyzed. The influence of the plasma etching process parameters on the plasma-induced damage to the InAlN/GaN heterostructure is considered. The possibility of formation of a 70 nm-length gate InAlN/GaN HEMT using low damage reactive ion etching of Si3N4 is demonstrated. |
| Databáze: | OpenAIRE |
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