Reliability and device scaling challenges of trapping charge flash memories

Autor:	J. Ku, Hung-Yueh Chen, Y.Y. Liao, N.K. Zous, Chih-Yuan Lu, Tahui Wang, W.J. Tsai, Wenchi Ting, C.C. Yeh, T.C. Lu
Rok vydání:	2004
Předmět:	Non-volatile memory Flash (photography) Hardware_MEMORYSTRUCTURES Reliability (semiconductor) Computer science Scalability Charge trap flash Electronic engineering Node (circuits) Integrated circuit design Flash memory
Zdroj:	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).
Popis:	As flash memories move toward the giga-bits era, several challenges limit their scalability. Floating gate flash memories face the problems of un-scalable tunnel oxide, and the last technology node of NOR flash was predicted to be 65 nm, based on the extrapolation of the difference between physical and electrical cell dimensions vs. generations, which drops to zero at 45 nm. Although SONOS-type flash memories show better scalability and simpler process, there are still some difficulties. In this paper, three SONOS-type flash memories (SONOS, NROM and PHINES) are compared and the scaling problems and reliability issues are disclosed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0cb13008ef558ac4c768ad188a42cb42 https://doi.org/10.1109/ipfa.2004.1345612 Zobrazit plný text záznamu