Analysis of Silicide / Diffusion Contact Resistance Making Use of Transmission Line Stuctures

Autor:	Karen Maex, Muriel de Potter, Richard Lindsay, Georg Tempel, Amal Akheyar, Anne Lauwers
Rok vydání:	2002
Předmět:	Materials science Annealing (metallurgy) business.industry Contact resistance Doping Salicide chemistry.chemical_compound chemistry Transmission line Silicide Optoelectronics Junction formation Diffusion (business) business
Zdroj:	MRS Proceedings. 716
ISSN:	1946-4274 0272-9172
Popis:	This work deals with the analysis of the resistances of Co-silicided As and B junctions. The influence of junction formation and salicide process on contact resistance was investigated. The contact resistance between the silicide and source/drain region was studied by making use of dedicated transmission line structures. The transmission line structures (TLM) consist of alternating silicided and unsilicided diffusion segments, obtained by making use of a salicide blocking mask. Our TLM results show that the contact resistance has a strong dependence on the doping profile of the diffused region and increases with decreasing surface doping, with increasing Co-silicide thickness, annealing temperatures and time of silicidation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0cab5e88c917050b618ebe14192d236e https://doi.org/10.1557/proc-716-b1.10 Zobrazit plný text záznamu Full text from SpringerLink