Ion‐implanted extrinsic Ge photodetectors with extended cutoff wavelength

Autor:	E. E. Haller, P. N. Luke, William L. Hansen, I. C. Wu, J.W. Beeman
Rok vydání:	1991
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Photoconductivity Doping chemistry.chemical_element Photodetector Germanium Responsivity Ion implantation chemistry Absorption edge Optoelectronics business Noise-equivalent power
Zdroj:	Applied Physics Letters. 58:1431-1433
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.105189
Popis:	Far‐infrared properties of a two‐layer structure consisting of an ion‐implantation doped layer on a thin ultrapure slice of germanium have been studied. Photoresponse extends beyond the shallow impurity absorption edge at 120 μm to about 192 μm. Photoconductivity studies have been performed between 4.2 and 1.3 K. Detectors with an area of 1×1 mm2 have dark currents of less than 100 electrons/s at temperatures ≤1.3 K at a bias of 70 mV. A responsivity of 0.9 A/W and a noise equivalent power of 5×10−16 W/Hz1/2 have been measured using photons in a narrow band 99±0.5 μm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0caaeeb38681955f16aa28937cb35612 https://doi.org/10.1063/1.105189 Zobrazit plný text záznamu