Total dose effects on elementary transistors of a comparator in bipolar technology

Autor:	G. Sarrabayrouse, F.X. Guerre, J.M. Bosc
Rok vydání:	2002
Předmět:	Engineering Comparator business.industry Transistor Integrated circuit BiCMOS Hybrid-pi model Discrete circuit equipment and supplies Bipolar transistor biasing law.invention Integrated injection logic law Electronic engineering business
Zdroj:	Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems.
DOI:	10.1109/radecs.1995.509781
Popis:	In the present work we investigate elementary transistors behaviour of an Integrated Circuit using junction isolation bipolar technology. Polarization conditions and dose rate effects on the main elementary transistor types are analysed. Furthermore, the IC electronic function degradations are studied. Finally, a comparison between the IC's degradations and the elementary components ones is attempted.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0c9abbc43d094c7ad7c4906ecddef2c7 https://doi.org/10.1109/radecs.1995.509781 Zobrazit plný text záznamu