Aluminum titanium nitride films grown with multiple precursors
| Autor: | N. M. Russell, J. P. Endle, John G. Ekerdt, M. D. Healy, J. M. White, Y. M. Sun |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Hydride Mechanical Engineering Inorganic chemistry chemistry.chemical_element Chemical vapor deposition Nitride Condensed Matter Physics Titanium nitride chemistry.chemical_compound Chemical state X-ray photoelectron spectroscopy chemistry Mechanics of Materials General Materials Science Metalorganic vapour phase epitaxy Titanium |
| Zdroj: | Materials Science in Semiconductor Processing. 2:253-261 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/s1369-8001(99)00021-9 |
| Popis: | Metallorganic chemical vapor deposition (MOCVD) of AlxTi1−xN films was investigated at 200 to 400°C using terakis(dimethylamino)titanium (TDMAT), dimethylaluminum hydride (DMAH), triethylaluminum (TEA) and dimethylhydrazine (DMH). The film composition was examined by in-situ X-ray photoelectron spectroscopy. AlxTi1−xN and AlxTi1−xCN (CN designate to carbo-nitride) film growth was observed on SiO2/Si(100) using various combinations of above precursors. With TDMAT and either Al precursor, the metal to C to N ratio is approximately constant at 1:1:1 for most conditions studied. Introducing DMH significantly lowers the carbon concentration from ∼33 to ∼10% and increases the N content from 33 to more than 50%. The chemical states of Ti, C and N in AlxTi1−xCN and AlxTi1−xN films are not identical. The Al chemical state in AlxTi1−xCN films is nitride at low Al concentration, but increasingly more carbidic at high Al concentration. The Al content in the film is controlled by the ratio of partial pressures of the Al and Ti precursors in the gas phase. Using triethylaluminum (TEA) instead of DMAH does not introduce extra carbon into the film. A higher flow rate of TEA is needed, compared to that for DMAH, for the same Al/Ti ratio in the film. Finally, the step coverage of films grown at various temperatures was examined. |
| Databáze: | OpenAIRE |
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