Dual-wavelength electroluminescence from an n-ZnO/p-GaN heterojunction light emitting diode
| Autor: | Hung-Jen Chiu, Tai-Hong Chen, Bor-Sheng Tsai, Chai-Cheng Ho, Day-Shan Liu, Li-Wen Lai |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry General Physics and Astronomy Heterojunction Surfaces and Interfaces General Chemistry Semiconductor device Atmospheric temperature range Nitride Electroluminescence Condensed Matter Physics Surfaces Coatings and Films law.invention law Optoelectronics Luminescence business Light-emitting diode |
| Zdroj: | Applied Surface Science. 354:74-78 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2015.03.179 |
| Popis: | We investigated the electro-optical properties of light emitting diodes (LEDs) fabricated by using the n -ZnO/ p -GaN heterojunction structures annealed at 450 °C and 700 °C, in vacuum ambient. A dominant near-UV emission at approximately 420 nm was observed from the LED fabricated by the 450 °C-annealed n -ZnO/ p -GaN heterojunction structure, whereas that of the structure annealed at 700 °C emitted a yellowish light composed of the dual-wavelength emissions centered at 420 and 610 nm. The mechanism responsible for the broad long-wavelength radiation was ascribed to the transitions associated with both the deep-level emissions due to the activation of the native defects on the n -ZnO side surface and the formation of the Ga–O interlayer resulting from the in-diffusion of oxygen atoms to the p -GaN side surface of the n -ZnO/ p -GaN interface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect