Study of Polycrystalline and Amorphous LPCVD Silicon Films by Atomic Force Microscopy
Autor: | H. Noll, A. Pleschinger, J. Lutz, M. Pippan, F. Kuchar |
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Rok vydání: | 1997 |
Předmět: |
Amorphous silicon
Materials science Silicon Nanocrystalline silicon chemistry.chemical_element Surfaces and Interfaces General Chemistry Chemical vapor deposition engineering.material Condensed Matter Physics Surfaces Coatings and Films Amorphous solid Crystallography chemistry.chemical_compound Polycrystalline silicon chemistry Materials Chemistry engineering Crystallite Composite material Thin film |
Zdroj: | Surface and Interface Analysis. 25:529-532 |
ISSN: | 1096-9918 0142-2421 |
DOI: | 10.1002/(sici)1096-9918(199706)25:7/8<529::aid-sia263>3.0.co;2-s |
Popis: | The surface topography and structure of low-pressure chemical vapour-deposited silicon films grown on the thermal oxide of (100) silicon substrates have been investigated using atomic force microscopy. The measurements have been performed on undoped as-grown samples with deposition temperatures between 550 and 630°C and after ex situ phosphorus doping for samples deposited at 620°C. The transition from amorphous to polycrystalline deposition of the silicon film takes place in the temperature range 570-600°C. At 570°C a small number of crystallites are embedded in an amorphous matrix. With increasing temperature the number of crystallites grows rapidly and at 600°C the deposited film is polycrystalline. Doping from a POCl 3 source and subsequent annealing of films deposited at 620°C causes complete recrystallization. For the first time it has been possible to investigate the topography and the grain structure of polycrystalline silicon films using a scanning probe technique only. Our clear distinction between these two features allows controversial results from different characterization methods to be clarified. |
Databáze: | OpenAIRE |
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