Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation

Autor:	Michael J. Aziz, Kan Otani, John W. Hutchinson, Xi Chen, John Chervinsky
Rok vydání:	2006
Předmět:	Three dimensional morphology Materials science Morphology (linguistics) Constitutive equation General Physics and Astronomy Irradiation Thin film Deformation (engineering) Molecular physics Finite element method Ion
Zdroj:	Journal of Applied Physics. 100:023535
ISSN:	1089-7550 0021-8979
Popis:	We have measured the evolving three-dimensional (3D) morphology of patterned SiO2 stripes on Si substrates induced by 3MeV O++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0c6df0030eda6d923559190ac632f285 https://doi.org/10.1063/1.2215269 Zobrazit plný text záznamu