Chemical Vapor Deposition of Polycrystalline Al2O3

Autor:	Philip Wong, McDonald Robinson
Rok vydání:	1970
Předmět:	Deposition rate Materials science Chemical engineering Torr Materials Chemistry Ceramics and Composites Substrate (chemistry) Chemical vapor deposition Crystallite
Zdroj:	Journal of the American Ceramic Society. 53:617-621
ISSN:	1551-2916 0002-7820
DOI:	10.1111/j.1151-2916.1970.tb15985.x
Popis:	Polycrystalline Al2O3 was chemically vapor-deposited onto sintered Al2O3 substrates by reaction of AlCl3 with (1) H2O, (2) CO:H2, and (3) O2 at 1000° and 1500°C and 0.5 and 5.0 torr. Although the thermodynamics of all these reactions predict the formation of solid Al2O3, the deposition rate of the first reaction was considerably greater than that of the second. The third reaction was so slow that no measurable deposit was formed in 6 h at 1500°C. Formation of dense deposits of α-Al2O3 was favored by increasing temperature and decreasing pressure. Microstructural examination of the dense deposits showed long columnar grains, the largest of which extended through the deposit from the substrate to the surface.
Databáze:	OpenAIRE
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