Decoration of dislocations in Bi12SiO20 crystals by annealing in a reducing atmosphere
Autor: | Ching-Fuh Lin, August F. Witt |
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Rok vydání: | 1994 |
Předmět: | |
Zdroj: | Journal of Crystal Growth. 140:444-446 |
ISSN: | 0022-0248 |
Popis: | Dislocations in Bi 12 SiO 20 (BSO) crystals, annealed in a reducing atmosphere, were directly observed by conventional light microscopy in transmission mode. A one-to-one correspondence between dislocations and etch pits was observed. |
Databáze: | OpenAIRE |
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