Decoration of dislocations in Bi12SiO20 crystals by annealing in a reducing atmosphere

Autor:	Ching-Fuh Lin, August F. Witt
Rok vydání:	1994
Předmět:	Materials science Solid-state physics Annealing (metallurgy) Reducing atmosphere Mineralogy Crystal structure Condensed Matter Physics Microstructure law.invention Inorganic Chemistry Optical microscope law Microscopy Materials Chemistry Composite material Dislocation
Zdroj:	Journal of Crystal Growth. 140:444-446
ISSN:	0022-0248
Popis:	Dislocations in Bi 12 SiO 20 (BSO) crystals, annealed in a reducing atmosphere, were directly observed by conventional light microscopy in transmission mode. A one-to-one correspondence between dislocations and etch pits was observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0c5bbb10f966ab386514313d1af85d32 https://doi.org/10.1016/0022-0248(94)90325-5 Zobrazit plný text záznamu