DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications
| Autor: | Sorin P. Voinigescu, Utku Alakusu, M. Sadegh Dadash, S. Bonen, David Harame |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier Silicon on insulator 020206 networking & telecommunications 02 engineering and technology 01 natural sciences Temperature measurement Power (physics) Logic gate 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Optoelectronics Cascode business Current density |
| Zdroj: | 2018 13th European Microwave Integrated Circuits Conference (EuMIC). |
| DOI: | 10.23919/eumic.2018.8539934 |
| Popis: | The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 °C. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFET technology, and comparable or higher than that of the best SiGe HBTs. Moreover, gm, MAG, f T , and f MAX improve monotonically as the gate length is reduced from 80 to 20 nm, and degrade by only 10-15% from 25 to 125 °C. Novel 4-terminal varactors and series-stacked n-MOSFET cascodes with back-gate control were also characterized to assess their application in VCOs, power amplifiers, single-transistor mixers and modulators. An output power of 14 dBm with 12% peak PAE and 24% drain efficiency were measured for 3- and 4-stack cascode test structures at 80 GHz, without any output matching network. |
| Databáze: | OpenAIRE |
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