Simulation and optimization of strained Si1−xGex buried channel p-MOSFETs
| Autor: | Xiangdong Chen, Sanjay K. Banerjee, David Onsongo, Eduardo J Quinones, Zhonghai Shi |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Subthreshold conduction business.industry Electrical engineering Condensed Matter Physics Mole fraction Electronic Optical and Magnetic Materials Materials Chemistry Optoelectronics Electrical and Electronic Engineering Current (fluid) Drain current business Layer (electronics) AND gate Communication channel Voltage |
| Zdroj: | Solid-State Electronics. 44:1223-1228 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(00)00031-9 |
| Popis: | Deep submicron (0.35 μm) strained Si1−xGex buried channel p-MOSFETs with a Ge concentration up to 50% were simulated using the MEDICI device simulator. A buried channel structure offers several benefits over a surface channel structure without a Si cap. Simulation results show that the maximum drain current increases monotonically with the Ge mole fraction. The drive current enhancement is more than 300% for Si0.5 Ge0.5 over Si. Subthreshold characteristics were analyzed for different Ge mole fractions in this study. The effects of Si cap layer thickness and Si1−xGex channel thickness on drive current and gate voltage operating window were analyzed. The simulation results show that the drive current is the highest when the Si1−xGex layer thickness is between 100 and 300 A and that Si1−xGex layer thickness can be as low as 50 A with less than 10% penalty in the drive current, for structures with a 50 A Si cap layer. |
| Databáze: | OpenAIRE |
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