Planar integration of a resonant-tunneling diode with pHEMT using a novel proton implantation technique

Autor:	L.J. Mahoney, R. H. Mathews, C.L. Chen, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Rok vydání:	1998
Předmět:	Materials science Proton business.industry Transistor Resonant-tunneling diode High-electron-mobility transistor Cutoff frequency Electronic Optical and Magnetic Materials law.invention Ion implantation Planar law Optoelectronics Electrical and Electronic Engineering business Diode
Zdroj:	IEEE Electron Device Letters. 19:478-480
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.735752
Popis:	A novel technique of integrating resonant-tunneling diodes (RTDs) with pseudomorphic high-electron-mobility transistors (pHEMTs) is demonstrated. A proton was implanted through the pHEMT layers to convert the RTD structure underneath to a high-resistivity buffer without degrading the performance of the pHEMT. The cutoff frequency is 16 GHz for a 1.5-/spl mu/m-gate-length pHEMT on such an implanted buffer. Substituting the conventional deep mesa etch with ion implantation maintains a highly planar surface. Such a monolithically integrated RTD/pHEMT oscillator is described.
Databáze:	OpenAIRE
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