Performance Improvement of a Novel Capacitor-less 1T-DRAM Based on a Lateral p Type Doped Region
| Autor: | Georges Guegan, G. Molas, C. Raynaud, S. Puget |
|---|---|
| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials. |
| DOI: | 10.7567/ssdm.2010.e-1-1 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|