Structure and polarity of {111} CdTe on {100} GaAs
| Autor: | C. J. Rossouw, T. Warminski, L.S. Wielunski, S. R. Glanvill, M. S. Kwietniak, Geoff N. Pain |
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| Rok vydání: | 1989 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 66:619-624 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.343527 |
| Popis: | Ultramicrotome techniques are used to prepare thin cross sections of a {111} epilayer of CdTe deposited by metalorganic chemical vapor deposition onto a {100} GaAs substrate. The structure of these samples is investigated by transmission electron microscopy using high‐resolution (HRTEM) and diffraction contrast, and the polarity of the {111} layer by convergent beam electron diffraction (CBED) and characteristic x‐ray emission under various electron channelling conditions, or ALCHEMI. Rutherford backscattering and channelling experiments on the bulk film confirm the presence of a multiply twinned lamellar structure as observed by electron beam techniques. Strong channeling confirms that the crystallinity is good, and that no significant concentration of defects occurs. HRTEM images of the {111} epilayer from the interface across the lamellar twins show few dislocations or crystal defects. Diffraction contrast indicates the presence of a periodic strain in the GaAs and parallel to the interface. CBED and A... |
| Databáze: | OpenAIRE |
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