Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

Autor:	Seon-Pil Jang, Michael L. Geier, Ananth Dodabalapur, Bong-Jun Kim, Mark C. Hersam, Pradyumna L. Prabhumirashi
Rok vydání:	2014
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) Ambipolar diffusion business.industry Bilayer Oxide Nanotechnology Carbon nanotube law.invention Amorphous solid chemistry.chemical_compound Semiconductor chemistry law Thin-film transistor business
Zdroj:	Applied Physics Letters. 104:062101
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4864629
Popis:	We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm2 V−1 s−1 at low operating voltages ( 10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0c285c0ac40c34f050857f8de9072994 https://doi.org/10.1063/1.4864629 Zobrazit plný text záznamu