Thermodynamic analysis of Si doping in GaN

Autor:	T. Boufaden, Z. Benzarti, B. El Jani, I. Halidou
Rok vydání:	2006
Předmět:	Materials science Silicon Dopant Doping Si doped chemistry.chemical_element Thermodynamics Condensed Matter Physics Gibbs free energy symbols.namesake chemistry Surface roughening symbols General Materials Science Metalorganic vapour phase epitaxy Electrical and Electronic Engineering
Zdroj:	Superlattices and Microstructures. 40:496-500
ISSN:	0749-6036
DOI:	10.1016/j.spmi.2006.09.023
Popis:	Equilibrium calculations of Si-doping in GaN are investigated using the Gemini code. The method of the calculation is based on the minimisation of the Gibbs free energy. Experimental growth conditions are used for the calculation. The variables are the amount of the dopant and the temperature. The results show the formation of a solid Si3N4 compound with a certain quantity of the input SiH4, that is the silicon precursor in our MOVPE system. Si3N4 formation can explain the limitation of Si incorporation and the surface roughening as revealed by MOVPE Si doped layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0c2409c6e7225fa64bacb07a8cf3943a https://doi.org/10.1016/j.spmi.2006.09.023 Zobrazit plný text záznamu Full Text from ScienceDirect