The Effect of Scanning Electron Beam Annealing on the Reverse Current in Ti-GaAs Schottky Diodes
| Autor: | Krishnamachar Prasad, A.G. Nassibian, Lorenzo Faraone, Hemlata Sharda, Zdzislaw Meglicki, Brett Nener |
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| Rok vydání: | 1988 |
| Předmět: |
Materials science
biology business.industry Scanning electron microscope Annealing (metallurgy) General Engineering General Physics and Astronomy Schottky diode Titanio biology.organism_classification Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Saturation current Cathode ray Physics::Accelerator Physics Optoelectronics business Diode |
| Zdroj: | Japanese Journal of Applied Physics. 27:L704 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | The effects of scanning electron beam annealing of Ti-GaAs Schottky diodes on the reverse diode characteristics are observed and discussed. Significant reductions in the values of the saturation current, the generation current and the shunt current are attributed to the low-energy secondary excitations generated by electron bombardment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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