Detection of C[sub 2]H[sub 4] Using Wide-Bandgap Semiconductor Sensors
| Autor: | Brent P. Gila, Young-Woo Heo, Fan Ren, B. S. Kang, C. R. Abernathy, Kelly P. Ip, Suku Kim, David P. Norton, Stephen J. Pearton |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Hydrogen Renewable Energy Sustainability and the Environment business.industry Doping Oxide Wide-bandgap semiconductor Schottky diode chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Semiconductor chemistry Materials Chemistry Electrochemistry Optoelectronics Gas detector business Diode |
| Zdroj: | Journal of The Electrochemical Society. 151:G468 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.1758817 |
| Popis: | The characteristics of SC 2 O 3 /AIGaN/GaN metal-oxide semiconductor (MOS) diodes and Pt/ZnO Schottky diodes as detectors of C 2 H 4 are reported. At 25°C, a change in forward current of ∼40 μA at a bias of 2.5 V was obtained in response to a change in ambient from pure N 2 to 10% C 2 H 4 J90% N 2 . The current changes are almost linearly proportional to the testing temperature and reach around 400 μA at 400°C. The mechanism of the change in forward gate current appears to be formation of a dipole layer at the oxide/AIGaN interface that screens some of the piezo-induced channel charge at the AIGaN/GaN interface. The ZnO diodes show no detectable change in current when exposed to ethylene at 25°C but exhibit large changes (up to 10 mA) at higher temperatures. In these diodes the detection mechanism appears to also involve introduction of hydrogen donors into the near-surface region of the ZnO, increasing the effective doping level under the rectifying contact. |
| Databáze: | OpenAIRE |
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