| Autor: |
Jun Liu, Jing Wang, Wen Ping Geng, Xiu Jian Chou, Ya Ting Zhang |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
Advanced Materials Research. :2467-2471 |
| ISSN: |
1662-8985 |
| DOI: |
10.4028/www.scientific.net/amr.194-196.2467 |
| Popis: |
By the sol-gel process, Pb0.97La0.02(Zr0.95Ti0.05)O3(PLZT) antiferroelectric (AFE) thin films with different thicknesses were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates. The phase structure of the PLZT antiferroelectric thin films was studied by X-ray diffraction (XRD) analyses. The electric field-induced AFE-FE phase transformation behavior of the PLZT thin films，was examined by polarization versus field (P-E) and relative permittivity versus field (C-E) measurements, with priority focused on thickness-dependent phase switching field. The current by the polarization and depolarization of polar in the PLZT films was measured through current density-electric field (J-E) measurement. With the increase of film thickness, the maximum polarization less and less, the maximum current density is increasing. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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