Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers
| Autor: | Robert Kudrawiec, Janne Puustinen, Antti Tukiainen, Mircea Guina, E.-M. Pavelescu |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Photoluminescence
Materials science Annealing (metallurgy) business.industry Biophysics Analytical chemistry General Chemistry Condensed Matter Physics Biochemistry Atomic and Molecular Physics and Optics Blueshift Electron beam processing Optoelectronics Irradiation Luminescence Spectroscopy business Molecular beam epitaxy |
| Zdroj: | Journal of Luminescence. 136:347-350 |
| ISSN: | 0022-2313 |
| Popis: | We have investigated the influence of 7-MeV electron irradiation (1.2×1015 and 1.8×1016 electrons/cm−2 doses) and subsequent rapid thermal annealing (RTA) on luminescence efficiency of nearly lattice-matched 1-eV GaInNAs-on-GaAs thin epilayers, grown by molecular beam epitaxy. The study has been done by means of 9 K photoluminescence (PL) in conjunction with 300 K photoreflectance (PR) spectroscopy and x-ray diffraction (XRD) measurements. An enhancement in PL has been found for the lower dose whereas a drastic deterioration in PL has been seen for the higher dose. When rapid thermally annealed at 800 °C for 1 min an enhancement in PL has been observed, noticeably for the sample irradiated at a higher dose, as compared to the reference non-irradiated sample. The irradiation-promoted enhancement in PL upon annealing has been accompanied by a small additional blue shift (BS) of the PL. This additional annealing-induced BS has been found, by PR and XRD, to be due to an irradiation-promoted enhancement in In–N bonds formation, whose magnitude appears to not depend on dose within the studied range. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect