Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits
| Autor: | H. Kanber, M. Pacer, P. E. Norris, C. Beckham, S. X. Bar |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
business.industry Transistor Analytical chemistry Semiconductor device Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Silicon nitride chemistry law Materials Chemistry Optoelectronics Breakdown voltage Field-effect transistor MESFET Wafer Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 23:159-166 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02655263 |
| Popis: | GaAs MESFET device structures have been grown on silicon nitride or silicon dioxide masked 50 and 76 mm GaAs substrates by low pressure organometallic vapor phase epitaxy. Very smooth, featureless morphology and 100 percent selectivity of GaAs islands have been achieved over a range of growth conditions. Optimization of the GaAs p-buffer of the field effect transistor structure has led to improved device performance, including increased breakdown voltage. Device characteristics of the 0.5 μm gate low noise metal semiconductor field-effect transistors fabricated on these islands show good performance and wafer to wafer reproducibility on the second device lot. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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