| Popis: |
The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction. |
