High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient
| Autor: | Hiroshi Amano, Motoaki Iwaya, Kenichiro Takeda, Satoshi Kamiyama, Tomoki Ichikawa, Isamu Akasaki, Kengo Nagata, Kentaro Nagamatsu |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Aluminium nitride Annealing (metallurgy) Doping Analytical chemistry chemistry.chemical_element Gallium nitride Surfaces and Interfaces Condensed Matter Physics Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Secondary ion mass spectrometry chemistry.chemical_compound chemistry Ternary compound law Materials Chemistry Electrical and Electronic Engineering Light-emitting diode |
| Zdroj: | physica status solidi (a). 207:1393-1396 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.200983448 |
| Popis: | We demonstrated activation annealing of Mg-doped p-type Al 0.17 Ga 0.83 N in different gases. The hole concentration of Al 0.17 Ga 0.83 N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3 × 10 16 cm -3 at room temperature was achieved by annealing in oxygen flow at 900 °C. Secondary ion mass spectroscopy shows that hydrogen dissociation from Mg-doped Al 0.17 Ga 0.83 N is found to be enhanced by annealing in a flow of oxygen, compared with annealing in a flow of nitrogen. We confirmed the effect of activation annealing in oxygen flow on the performance of UV light-emitting diode (LED). At a DC current of 100 mA, the output power of the LED annealed in oxygen flow at 900 °C is four times higher than that of the LED annealed in nitrogen flow at 800 °C. |
| Databáze: | OpenAIRE |
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