| Autor: |
Kuang-Yau Teng, Shiu-Cheng Lou, Chulung Chen, I-Nan Lin, Chien-Yao Tang |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
25th International Vacuum Nanoelectronics Conference. |
| DOI: |
10.1109/ivnc.2012.6316890 |
| Popis: |
The enhancement on the plasma illumination characteristics of a capacity-type plasma devices (CP-devices) utilizing the diamond coated Si-nanotips as cathodes was systematically investigated. The improvement on these characteristics was closely correlated with the electron field emission (EFE) properties of diamond films coated. The microcrystalline diamond films grown a ultrananocrystalline diamond nucleation layer ((MCD/UNCD), which possessed lowest turn-on field for inducing the EFE process (E 0 =4.67 V/μm) with largest EFE current density (J e =0.31 mA/cm2), resulted in the best plasma illumination performance for the CP-devices, as compared with those made of the MCD/Si films grown without the nucleation layer. The plasma can be triggered at the lowest threshold field of E th =0.24 V/μm. Transmission electron microscopic studies revealed that the secondary microwave plasma enhanced CVD process altered the microstructure of the UNCD nuclear layer, instead of growing a layer of large-grain diamond films on top of the UNCD nuclear layer. The MCD/UNCD films that contained large diamond aggregates evenly distributed among the ultra-small grain matrix, with the induction of a-few-layer graphite, surrounding the large aggregates exhibit superior EFE and plasma illumination characteristics for the MCD/UNCD films/devices, as compared with those of the MCD/Si ones. The presence of graphene-like phase is presumed to be the prime factor resulting in superior EFE properties for the MCD I films and the better plasma illumination characteristics for the CP-devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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