Study of nitrogen implanted amorphous hydrogenated carbon thin films by variable-energy positron annihilation spectroscopy

Autor: Antonio Zecca, F. L. Freire, Carlos A. Achete, R. S. Brusa, Gino Mariotto, G. R. Karwasz, D. F. Franceschini
Rok vydání: 1997
Předmět:
Zdroj: Journal of Applied Physics. 81:2451-2453
ISSN: 1089-7550
0021-8979
DOI: 10.1063/1.364296
Popis: Hard amorphous hydrogenated carbon (a-C:H) films deposited by self-bias glow discharge were implanted at room temperature with 70 keV nitrogen ions at fluences between 2.0 and 9.0×1016 N/cm2. The implanted samples were analyzed by positron Doppler broadening annihilation spectroscopy to determine the voids distribution. For samples implanted with 2.0×1016 N/cm2 the defect distribution is broader than the vacancies depth profile predicted by Monte Carlo simulation. For higher fluences we observed a reduction of the defect density. These results are discussed in terms of a competition between two processes: ion induced defects and structural modifications induced in the films due to ion implantation.
Databáze: OpenAIRE