Study of nitrogen implanted amorphous hydrogenated carbon thin films by variable-energy positron annihilation spectroscopy
Autor: | Antonio Zecca, F. L. Freire, Carlos A. Achete, R. S. Brusa, Gino Mariotto, G. R. Karwasz, D. F. Franceschini |
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Rok vydání: | 1997 |
Předmět: | |
Zdroj: | Journal of Applied Physics. 81:2451-2453 |
ISSN: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.364296 |
Popis: | Hard amorphous hydrogenated carbon (a-C:H) films deposited by self-bias glow discharge were implanted at room temperature with 70 keV nitrogen ions at fluences between 2.0 and 9.0×1016 N/cm2. The implanted samples were analyzed by positron Doppler broadening annihilation spectroscopy to determine the voids distribution. For samples implanted with 2.0×1016 N/cm2 the defect distribution is broader than the vacancies depth profile predicted by Monte Carlo simulation. For higher fluences we observed a reduction of the defect density. These results are discussed in terms of a competition between two processes: ion induced defects and structural modifications induced in the films due to ion implantation. |
Databáze: | OpenAIRE |
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