Study of Solving the Outgas Induced Defect in Metal Hard Mask All-in-One Etch Process

Autor:	Li-Min Yao, Jiang Min, Ya-Hui Huang, Bin Liu, Lv Yukun, Xiao-Bing Shi, Zeng Linhua, Ren Yu
Rok vydání:	2014
Předmět:	Materials science FOUP business.industry Condensation Process (computing) Metal Outgassing Etching (microfabrication) visual_art visual_art.visual_art_medium Optoelectronics Wafer business Hard mask
Zdroj:	ECS Transactions. 60:323-329
ISSN:	1938-6737 1938-5862
DOI:	10.1149/06001.0323ecst
Popis:	This article introduced the issues when running 55nm BEOL MHM (Metal Hard Mask) AIO (All-In-One) Etch during manufacturing. Two kinds of issues are studied: one is the post etching condensation and another is the particles formed on un-etch wafers. Both issues show slot correlation which depends on wafer position in FOUP (Front Open Unified Pod): lower slots are defect free while upper slots getting worse. Experiments are carried on to study the slot effect as well as Q-time impact. It is identified that F (Fluorine) contained outgas generates the defects which impacted the wafers in the upper slots within FOUP. Compared to tightening Q-time and FOUP splitting, installing Purge Storage is much easier to control for massive production. It’s a kind of “In-situ” degas solution, simple but very effective. Furthermore it could be good reference to other more applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0bed5c8a5044554adfe4483d9c6d4829 https://doi.org/10.1149/06001.0323ecst Zobrazit plný text záznamu