Complementary Strained Si GAA Nanowire TFET Inverter With Suppressed Ambipolarity
| Autor: | S. Mantl, Qing-Tai Zhao, Stefan Trellenkamp, P. Bernardy, G. V. Luong, Keyvan Narimani, A. T. Tiedemann |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Ambipolar diffusion Transistor Nanowire Electrical engineering High voltage 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention Noise margin law Logic gate 0103 physical sciences Optoelectronics Inverter Electrical and Electronic Engineering 0210 nano-technology business Quantum tunnelling |
| Zdroj: | IEEE Electron Device Letters. 37:950-953 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2016.2582041 |
| Popis: | In this letter, we present complementary tunneling field-effect transistors (CTFETs) based on strained Si with gate all around nanowire structures on a single chip. The main focus is to suppress the ambipolar behavior of the TFETs with a gate–drain underlap. Detailed device characterization and demonstration of a CTFET inverter show that the ambipolar current is successfully eliminated for both p- and n-devices. The CTFET inverter transfer characteristics indicate maximum separation of the high/low level with a sharp transition (high voltage gain) at a $V_{\mathrm{ dd}}$ down to 0.4 V. In addition, high noise margin levels of 40% of the applied $V_{\mathrm{ dd}}$ are obtained. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|