Glow discharge optical spectroscopy measurement of dopant concentrations in a-Si:H

Autor:	Rene A. Lujan, J.C. Zesch, V.R. Deline
Rok vydání:	1980
Předmět:	inorganic chemicals Glow discharge Materials science Dopant Silicon Analytical chemistry chemistry.chemical_element Plasma Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Materials Chemistry Ceramics and Composites Boron Spectroscopy Deposition (law)
Zdroj:	Journal of Non-Crystalline Solids. :273-277
ISSN:	0022-3093
DOI:	10.1016/0022-3093(80)90606-7
Popis:	We report the results of glow discharge optical spectroscopy (GDOS) measurements of total dopant concentrations in a-Si:H films. Significant differences (up to a factor of 4.8) were found between the ratio of boron to silicon of the films and that of their deposition plasmas.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0bd0c258c632b663cc38dfa6f1264219 https://doi.org/10.1016/0022-3093(80)90606-7 Zobrazit plný text záznamu