A tri-state body charge modulated SOI sense amplifier

Autor:	Jente Benedict Kuang, C.T. Chuang
Rok vydání:	2002
Předmět:	Engineering Sense amplifier business.industry Current sense amplifier Electrical engineering Electronic engineering Silicon on insulator Cmos logic circuits Differential amplifier business Leakage (electronics)
Zdroj:	2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207).
DOI:	10.1109/soic.2001.958023
Popis:	We present a tri-state dynamic body charge modulation technique for sense and differential amplifiers in SOI technology. To execute a RAM read function, sensing devices are designed to cycle through three distinctive (i.e., high body bias, floating body, and low body bias) states. This technique delivers high speed sensing, good matching characteristics, and low standby leakage simultaneously, and, therefore, is suitable for low-power high-performance applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0bc9f76ee75e3b16ff6ee90cc2f5f592 https://doi.org/10.1109/soic.2001.958023 Zobrazit plný text záznamu