Heterojunction bipolar transistors for high speed integrated circuits
| Autor: | C.W. Farley |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor Bipolar junction transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Insulated-gate bipolar transistor Bipolar transistor biasing Integrated injection logic Current injection technique Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor business Hardware_LOGICDESIGN |
| Zdroj: | IEEE International Symposium on Circuits and Systems. |
| DOI: | 10.1109/iscas.1990.112530 |
| Popis: | The unique characteristics of heterojunction bipolar transistors (HBTs), their fabrication, state-of-the-art performance and applications are discussed. The future directions of HBT research and commercialization, including new material systems and advanced device structures, are addressed. HBTs are compared with other devices which operate in the GHz frequency range. These devices include bipolar junction transistors and field effect transistors. A discussion of HBT materials is presented. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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