Ammonothermal growth of 2 inch long GaN single crystals using an acidic NH4F mineralizer in a Ag-lined autoclave
| Autor: | Kohei Shima, Tohru Ishiguro, Shigefusa F. Chichibu, Kazunobu Kojima, Quanxi Bao, Ryu Osanai, Daisuke Tomida, Makoto Saito |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Exciton General Engineering Analytical chemistry General Physics and Astronomy Gallium nitride Crystal growth 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Radius of curvature (optics) Autoclave chemistry.chemical_compound chemistry 0103 physical sciences Wafer Dislocation 0210 nano-technology |
| Zdroj: | Applied Physics Express. 13:055505 |
| ISSN: | 1882-0786 1882-0778 |
| Popis: | Seeded ammonothermal growths of a few-mm-thick GaN crystals on a 2 inch diameter c-plane and a 45 mm long m-plane GaN wafers were carried out by using an NH4F mineralizer in a 60 mm diameter Ag-lined autoclave. As a result of dynamic control of the temperature profile, low dislocation density and nearly bowing-free m-plane GaN was grown: i.e. the full-width at half-maximum values for the X-ray rocking curves of the 10 2 reflections were smaller than 28 arcsec and the radius of curvature was estimated to be 1460 m. In addition, its low temperature photoluminescence spectrum exhibited free and neutral donor-bound exciton emission peaks. |
| Databáze: | OpenAIRE |
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