PMOS arrays self-protection capability limitation
| Autor: | Vladislav Vashchenko, Andrei Shibkov, Augusto Tazzoli |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering Electrostatic discharge Computer simulation business.industry 020206 networking & telecommunications 02 engineering and technology Dissipation 01 natural sciences Instability PMOS logic 0103 physical sciences Thermal 0202 electrical engineering electronic engineering information engineering Electronic engineering Time domain business Positive feedback |
| Zdroj: | 2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD). |
| DOI: | 10.1109/eosesd.2016.7592558 |
| Popis: | A study of PMOS arrays self-protection capability, related HBM-TLP miscorrelation and HBM passing level windowing effect is presented. Based on experimental results and 2D mixed-mode numerical simulation analysis the physical mechanism of the PMOS self-protection limitation is determined to be a complex two-stage phenomenon. It is initiated by a “weak” isothermal avalanche-injection conductivity modulation followed by electro-thermal spatial current instability in the 1μs time domain due to the positive feedback between thermal carrier generation and local power dissipation. The follow-up measures to improve the PMOS array self-protection capability are discussed and validated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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