Reaction study of cobalt and silicon nitride
| Autor: | Herbert L. Ho, Tue Nguyen, David E. Kotecki, Tai D. Nguyen |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Hydrogen Annealing (metallurgy) Mechanical Engineering Inorganic chemistry chemistry.chemical_element Chemical vapor deposition Nitride Condensed Matter Physics Chemical reaction Surface coating chemistry.chemical_compound chemistry Silicon nitride Mechanics of Materials General Materials Science Cobalt |
| Zdroj: | Journal of Materials Research. 8:2354-2361 |
| ISSN: | 2044-5326 0884-2914 |
| DOI: | 10.1557/jmr.1993.2354 |
| Popis: | The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4) during anneals from 200 °C−1000 °C in vacuum, Ar, and Ar–H2 ambient (95% Ar and 5% H2) has been studied. After the anneals, reduction of Si3N4 by Co to form cobalt silicide and cobalt nitride phases has been observed. Reduction of Si3N4 initially occurs at 600 °C; however, gross physical damage occurs at temperatures of ∼900 °C in Ar. The addition of hydrogen to the ambient enhances the onset of physical damage to the nitride film by as much as 200 °C. Mechanisms governing the Co/Si3N4 reaction have been proposed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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