| Autor: |
L. Bricard, A. M. Duchenois, J. Etrillard, C. Besombes |
| Rok vydání: |
1999 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:1510 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.590782 |
| Popis: |
We report on two new self-aligned processes intended for microelectronic devices realization exhibiting a significant reduction of the number of elementary technological levels. These processes allow to obtain a very short self-aligned contact separation without using spacers or wet etched mesa overhangs. As an example, only three lithographic masks are used to realize a triple mesa self-aligned heterojunction bipolar transistor (HBT). A bilayer resist process is used to define the specific shape of the upper contact that is used for self-alignment. A combination of selective, isotropic, or anisotropic processes and very simple selective lift-off processes are used to define the mesa and the contacts which are also used as masks during etching. The alloying of contacts may be performed just after deposition and lift-off. These processes can reduce the production cost and increase the reliability for integration in comparison with conventional self-alignment using the selective wet etched emitter overhang ... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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