Characteristics of Flexible Thin-Film Transistors With ZnO Channels
| Autor: | Te-Hua Fang, Liang-Wen Ji, Teen-Hang Meen, Kin-Tak Lam, Walter Water, Cheng-Zhi Wu, Yu-Jen Hsiao, Zhe-Wei Chiu |
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| Rok vydání: | 2013 |
| Předmět: |
Electron mobility
Materials science business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY Sputter deposition Flexible electronics Threshold voltage law.invention Thin-film transistor law Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering business Instrumentation Wurtzite crystal structure Leakage (electronics) |
| Zdroj: | IEEE Sensors Journal. 13:4940-4943 |
| ISSN: | 1558-1748 1530-437X |
| DOI: | 10.1109/jsen.2013.2267808 |
| Popis: | In this paper, we demonstrate the fabrication of ZnO-based thin-film transistors (TFTs) on flexible substrates (polyethylene terephthalate) through radio-frequency sputtering and low-temperature procedure. The device structure belongs to bottom-gate type TFTs where ZnO and HfO2 are used as channel and gate dielectric layer, respectively. XRD results show that the ZnO channel layers are hexagonal wurtzite structure with (002) orientation. The properties of the fabricated devices are also characterized within several environmental and physics conditions. It can be found that the flexible TFT device is with a low operating voltage and high current ON/OFF ratio; the gate leakage current and transparency are found to be ~12 nA and 75%, respectively. The gate leakage current (IG), drain-source current (IDS), ON/OFF current ratio (ION/OFF), threshold voltage (Vth), and field-effect mobility (μFE) are measured under different bending modes. |
| Databáze: | OpenAIRE |
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