Electroreflectance studies of Zn(O,S) buffer layers in Cu(In,Ga)Se2 solar cells: Bandgap energies and secondary phases
| Autor: | Dimitrios Hariskos, Benedikt Zerulla, Jasmin Seeger, Michael Hetterich, Wolfram Witte, Oliver Kiowski, Heinz Kalt, Jonas Grutke |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Range (particle radiation) Materials science Band gap Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Copper indium gallium selenide solar cells Buffer (optical fiber) Spectral line chemistry 0103 physical sciences Gallium 0210 nano-technology Spectroscopy Layer (electronics) |
| Zdroj: | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc40753.2019.8980771 |
| Popis: | Solution-grown Zn(O,S) buffer layers in Cu(In,Ga)Se 2 (CIGS) solar cells are investigated by angle-resolved electroreflectance (ER) spectroscopy. We demonstrate that ER can be used directly to measure the bandgap energy of very thin Zn(O,S) buffer layers in the device. Furthermore, ER measurements on CIGS solar cells with different gallium concentrations before and after thermal annealing (TA) were conducted and show no significant influence of the gallium concentration and TA on the buffer’s bandgap energy, as determined in the range of 2.8 – 2.9 eV. Moreover, some ER spectra exhibit an additional contribution at 2.3 eV. This finding can be ascribed to a secondary phase at the interface between CIGS absorber and Zn(O,S) buffer layer. |
| Databáze: | OpenAIRE |
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