Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
| Autor: | Mizuho Morita, Kazuo Nishimura, Tatsuya Okazaki, Akihito Shinozaki, Shinichi Urabe, Yuuki Morita, Satoru Morita |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon dioxide business.industry General Engineering Electrical breakdown Oxide General Physics and Astronomy Time-dependent gate oxide breakdown Photoexcitation chemistry.chemical_compound chemistry Optoelectronics Tunneling current business Quantum tunnelling Voltage |
| Zdroj: | Japanese Journal of Applied Physics. 43:7857-7860 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.43.7857 |
| Popis: | Tunneling current through ultrathin silicon dioxide films with a thickness of approximately 3.1 nm, formed on n-Si (100) by controlling preoxide growth during heating, is examined using Al/oxide/n-Si structures. Electron tunneling current through the oxide from n-Si to Al is decreased and the dielectric breakdown voltage is increased by the preoxide growth control. Electron tunneling current from Al to n-Si is increased by light exposure. The increase in electron tunneling current can be explained by the increase in oxide voltage with an inversion layer formed by photoexcitation. |
| Databáze: | OpenAIRE |
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